With the rapid advancement of technology, quantum dots have emerged as a key material in next-generation lighting and display systems due to their remarkable properties, such as continuous illumination, high color purity, and superior light conversion efficiency. The US patent No. 9,577,127 B1 introduces an innovative quantum dot fluorescent microsphere structure. By combining this product with advanced coating technologies, a new quantum dot module has been developed, enabling the creation of an improved lighting system.
This quantum dot module, based on the coating technology, as illustrated in FIG. 1, consists of a susceptor 1, a barrier film 2, and a carrier layer 3 embedded with quantum dots. The top surface of the susceptor is etched with a groove, and the quantum dot-containing carrier layer is placed inside this groove. A barrier film is then applied to both the side and upper surfaces of the carrier layer. This design encapsulates the quantum dots within the carrier layer, and they are fully protected by the susceptor and the barrier film, forming a secondary packaging structure. This dual-layer protection effectively prevents the penetration of moisture and oxygen, significantly extending the lifespan of the quantum dots and ensuring long-term performance.
In addition, the company has further developed a quantum dot light-emitting module, as shown in FIG. 2. This module includes a blue light chip 4, a phosphor layer 5, and the previously described quantum dot module. The quantum dot module is positioned above the phosphor layer 5, resting on the base 1. The susceptor 1 can be made from materials like sapphire, quartz, or glass, while the barrier film 2 may consist of silicon monoxide, silicon dioxide, aluminum oxide, or parylene. The barrier film can be applied through spin-coating, vapor deposition, sputtering, or atomic layer deposition, ensuring a tight and uniform coverage over the quantum dot carrier layer. This dense protective layer enhances the stability of the quantum dot material by effectively blocking moisture and oxygen.
The quantum dot light-emitting module utilizes a sapphire substrate, a silicon oxide barrier film, and a silica-based carrier layer. The high refractive index of the silica carrier layer helps reduce light loss caused by refraction at interfaces, thereby improving the overall light extraction efficiency. Additionally, the silica gel can be thoroughly mixed with the quantum dot material, offering initial protection against moisture and oxygen. However, due to the hygroscopic nature of silica, each quantum dot-containing carrier layer is coated with the barrier film to completely isolate external moisture and oxygen. The SiO material, being denser than traditional silica, provides a second level of protection, preventing oxidation and further enhancing the stability and longevity of the quantum dot components.
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