Abstract: Isolated gate drivers play an important role in power transmission in many systems. ISO driver isolated driver IC The Si823x supports up to 5KV isolation ratings.
Isolation gate drivers play an important role in power transmission in many systems. In this regard, Shiqiang's high-performance analog and mixed-signal IC manufacturer Silicon Labs has introduced the ISO driver isolated driver IC Si823x that can support up to 5KV isolation voltage rating. The device is the industry's fastest and most integrated isolated gate driver IC for a wide range of applications in UPS, inverters, inverters, communications power supplies, power supplies, motor control and lighting systems. The main model is the Si8233. Si8230. The latest information plan can be downloaded from the Shiqiang component e-commerce APP search.
Reduce cost and design complexityIsolated Driver IC The Si823x is patented based on Silicon Labs' RF isolation technology and is now available as a single-chip solution from Shiqiang. As engineers expect, the device is targeted at industrial systems with a high degree of safety and 120 Universal power supply with /220V power supply, which can greatly reduce BOM cost and complexity (reducing 12 external components compared to optocoupler plus driver). In addition, Si823x components have ultra-fast 50ns propagation delay combined with ordinary optocouplers. The gate driver solution is more than five times faster, enabling increased timing tolerance and higher system efficiency. Due to the mainstream advanced CMOS process technology, the performance of ISO driver components is not attenuated due to changes in time and temperature, and these problems are common in optocoupler solutions. This shows that the Si823x ISO driver series offers customers many performance improvements over optocoupler-based solutions. On the one hand, the number of switching of the MOSFET is significantly improved, and the power consumption of the FET switching cycle is reduced to make the power supply more efficient; on the other hand, the Si823x can effectively improve the efficiency of the integrated overlap protection.
High reliability and reduced board areaShiqiang's current Si823x ISO driver series supports gate drive voltages up to 24V and output current peaks from 0.5A to 4.0A, providing the best driving force for MOSFET and insulated gate bipolar transistor (IGBT) applications. Ensuring fast turn-off and start-up of external switching transistors for higher system reliability for maximum energy efficiency meets today's "green" energy standards. The Si823x is available in RoHS-compliant packages: SOIC-16 wide body, SOIC-16 narrow body, and LGA-14 package. The device also has a wide operating temperature range of -40°C to +125°C. In addition, the isolated driver IC Si823x series offers higher reliability, better noise immunity, high electromagnetic immunity, and 50% less printed circuit board area than other competing solutions.
Programmable, through multiple safety certificationsIn addition to performance, integration and stability, the Shiqiang Si823x series also features programmable dead time, allowing users to optimize for efficiency. If the input current is too low during system startup or shutdown, the integrated undervoltage lockout (UVLO) circuitry on both the input and output sides of the isolated driver will avoid erroneous switching of the FET driver, thus protecting the power supply. Not damaged. Isolation Driver IC The Si823x series has passed UL1577 certification, VDE certification, CQC certification and other safety certifications.
to sum upIn summary, power system engineers face many challenges when designing sophisticated, high-efficiency power delivery systems. Shiqiang and Silicon Labs are committed to helping solve key customer issues by providing greater functional integration and greater performance improvements than traditional solutions. The compact package, low propagation delay, flexibility, cost-effectiveness, high performance options and robust reliability make this ISO driver isolated driver IC, the Si823x, ideal for designers of isolated MOSFET / IGBT gate drive applications.
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